Infineon IRFP4127PBF N-Channel Power MOSFET: Datasheet, Application Circuits, and Key Specifications

The Infineon IRFP4127PBF is a high-performance N-Channel power MOSFET designed for demanding high-power switching applications. Leveraging advanced process technology, this HEXFET® MOSFET offers low on-state resistance, high switching speed, and ruggedized performance, making it a preferred choice in industrial, automotive, and power supply systems.

Key Specifications

The IRFP4127PBF is characterized by several critical parameters that define its performance. It boasts a drain-source voltage (V_DSS) of 200V, allowing it to handle high-voltage circuits effectively. The device features a continuous drain current (I_D) of 96A at 25°C, providing substantial current-carrying capability. A standout specification is its extremely low on-state resistance (R_DS(on)) of just 4.5 mΩ at 10 V gate drive, which minimizes conduction losses and improves overall efficiency. The MOSFET also offers a fast switching speed, reducing switching losses in high-frequency applications. Its avalanche energy rating ensures robustness in unpredictable operating conditions.

Application Circuits

The IRFP4127PBF is versatile and can be deployed in various circuit topologies. It is commonly used in:

- Switched-Mode Power Supplies (SMPS): Its low R_DS(on) and high current handling make it ideal for primary-side switches in high-power AC-DC converters.

- Motor Drive and Control Circuits: The MOSFET can efficiently drive high-current DC and brushless motors in industrial automation and electric vehicles.

- Audio Amplifiers: In class D audio amplifiers, it serves as the output switching device due to its fast switching and low distortion.

- DC-DC Converters: It is used in buck, boost, and synchronous rectifier configurations to enhance power conversion efficiency.

A typical application circuit involves using the MOSFET as a low-side switch driven by a PWM controller IC. Proper gate driving is crucial; a dedicated gate driver IC (like IR2110) is recommended to provide sufficient gate charge quickly and avoid slow switching, which can lead to excessive heat.

Datasheet Overview

The datasheet provides comprehensive information, including absolute maximum ratings, thermal characteristics, and safe operating area (SOA) graphs. Designers should pay close attention to the maximum junction temperature (T_J) of 175°C and ensure adequate heatsinking. The gate threshold voltage (V_GS(th)) typically ranges from 2V to 4V, but a driving voltage of 10V is advised for full enhancement. The datasheet also includes crucial dynamic characteristics like input and output capacitance, which are vital for predicting switching behavior.

ICGOODFIND: The Infineon IRFP4127PBF is a robust and efficient power MOSFET optimized for high-current, high-voltage switching. Its exceptionally low R_DS(on), high current capability, and reliability make it an excellent component for power electronics designers seeking to maximize performance and efficiency in demanding applications.

Keywords: Power MOSFET, Low RDS(on), High Current Switching, Motor Drive, Switched-Mode Power Supply (SMPS)