**HMC1114PM5E: A High-Performance GaAs pHEMT MMIC Distributed Power Amplifier from 2 to 20 GHz**

The relentless drive for higher data rates and wider bandwidths in modern RF and microwave systems, spanning commercial, aerospace, and defense applications, demands amplifiers capable of exceptional performance over multi-octave frequency ranges. The **HMC1114PM5E**, a Gallium Arsenide (GaAs) pseudomorphic High Electron Mobility Transistor (pHEMT) Monolithic Microwave Integrated Circuit (MMIC) distributed power amplifier, stands out as a premier solution designed to meet this challenge. This amplifier delivers a combination of high gain, output power, and efficiency across an instantaneous bandwidth from **2 to 20 GHz**, making it an indispensable component in complex signal chains.

At the core of the HMC1114PM5E's wideband capability is its **distributed amplifier architecture**. Unlike traditional tuned amplifiers that operate over a narrow band, the distributed, or traveling-wave, approach absorbs the transistor's intrinsic capacitances into artificial transmission lines. This design effectively creates a high-pass network that allows for gain over a remarkably broad spectrum. Fabricated using an advanced GaAs pHEMT process, the MMIC delivers outstanding performance metrics, including a typical **small-signal gain of 12 dB** and a **saturated output power (Psat) of +27 dBm**. Furthermore, it achieves a **output third-order intercept point (OIP3) of approximately 37 dBm**, underscoring its superiority in handling high-linearity applications with complex modulation schemes.

The amplifier is engineered for ease of integration into various systems. It requires a single positive supply voltage ranging from +5V to +8V, drawing a typical current of 280 mA. The device is housed in a compact, RoHS-compliant 5x5 mm LFCSP package, which is compatible with high-volume surface-mount technology (SMT) assembly processes. This makes it suitable for a wide array of applications, including but not limited to: **test and measurement equipment, electronic warfare (EW) systems, radar systems, fiber optic communications, and satellite communications**. Its wide bandwidth often allows it to replace multiple narrowband amplifiers, thereby simplifying design complexity, reducing board space, and lowering overall system cost.

**ICGOOODFIND**: The HMC1114PM5E is a benchmark GaAs pHEMT MMIC distributed power amplifier that sets a high standard for broadband performance. Its combination of **high output power, excellent gain flatness, and superior linearity** across the 2 to 20 GHz spectrum makes it a versatile and highly reliable choice for designers pushing the boundaries of wideband microwave systems.

**Keywords**:

1. **Distributed Amplifier**

2. **GaAs pHEMT**

3. **Wideband**

4. **Output Power**

5. **Linearity**